absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 35* i d @ v gs = 12v, t c = 100c continuous drain current 35* i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 35 a e ar repetitive avalanche energy 25 mj dv/dt peak d iode recovery dv/dt 3.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 9.3 (typical) g international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. c a www.irf.com 1 100v, n-channel * current is limited by package technology product summary part number radiation level r ds(on) i d irhm57160 100k rads (si) 0.018 ? 35a* irhm53160 300k rads (si) 0.018 ? 35a* irhm54160 600k rads (si) 0.018 ? 35a* irhm58160 1000k rads (si) 0.019 ? 35a* features: single event effect (see) hardened neutron tolerant identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermatically sealed electically isolated ceramic eyelets for footnotes refer to the last page to-254aa pre-irradiation light weight radiation hardened irhm57160 power mosfet thru-hole (to-254aa) pd-93784g downloaded from: http:///
irhm57160 pr e-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 35* i sm pulse source current (body diode) 140 v sd diode forward voltage 1.2 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time 270 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge 1.9 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website.for footnotes refer to the last page * current is limited by package thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.50 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.013 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.018 ? v gs = 12v, i d = 35a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 42 s v ds > 15v, i ds = 35a i dss zero gate voltage drain current 10 v ds = 80v ,v gs =0v 2 5 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 160 v gs =12v, i d = 35a q gs gate-to-source charge 45 nc v ds = 50v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 35 v dd = 50v, i d = 35a t r rise time 75 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 75 t f fall time 35 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in. fr. package) to source lead (6mm/0.25in. fr. package) with source wires internally bonded from source pin to drain pad c iss input capacitance 5620 v gs = 0v, v ds = 25v c oss output capacitance 1583 p f f = 1.0mhz c rss reverse transfer capacitance 50 na nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation irhm57160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source 0.013 0.014 ? v gs = 12v, i d =35a on-state resistance (to-3) r ds(on) static drain-to-source 0.018 0.019 ? v gs = 12v, i d =35a on-state resistance (to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhm57160, irhm53160 and irhm541602. part number irhm58160 fig a. single event effect, safe operating area v sd diode forward voltage 1.2 1.2 v v gs = 0v, i s = 35a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 100 100 100 100 100 i 59.8 341 32.5 100 100 100 35 25 au 82.3 350 28.4 100 100 80 25 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vgs vds br i au downloaded from: http:///
irhm57160 pr e-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to- s ource c urrent ( a ) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 35a downloaded from: http:///
www.irf.com 5 pre-irradiation irhm57160 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 30 60 90 120 150 180 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s 10s downloaded from: http:///
irhm57160 pr e-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhm57160 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 16a 22a 35a downloaded from: http:///
irhm57160 pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.82 mh peak i l = 35a, v gs = 12v i sd 35a, di/dt 330a/ s, v dd 100v, t j 150c footnotes: case outline and dimensions to-254aa caution 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not e s : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2011 downloaded from: http:///
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